The RF power amplifier is an indispensable component in the 5G base station. It is usually designed as a module and installed in the whole machine to minimize the impact on other components. Because the RF power amplifier will generate a lot of heat when it is working continuously at high speed, and the conventional RF power amplifier cannot perform fast and stable heat dissipation during the working process, and thus cannot ensure the stability of the subsequent continuous work. If heat dissipation is performed through openings, the heat dissipation efficiency is low, and impurities and dust in the outside air are likely to block the heat dissipation holes.
With the miniaturization of power electronic devices and the increase of power density, the temperature of the equipment has a great influence on its safe and reliable operation. Since the failure rate of power devices increases exponentially with the temperature of the device, in actual work, the temperature of the device may be too high or even burned due to the heat not being discharged in time or uneven distribution, which will affect the reliability and life of the circuit. At the same time, the thermal performance of the power device also has a certain influence on the output distortion of the power amplifier.
The heat generated by the RF power amplifier is relatively high. Generally, the bottom of the chip is directly soldered to the metal substrate for heat dissipation, and the top of the chip and the device shell are filled with thermally conductive silica gel to form a continuous heat conduction path. Thermal conductivity from 1.2~25.0W/mK; fire rating UL94V0; various thickness and hardness options: 0.5mm-5.0mm; operating temperature range: -40 To 160 ℃. The soft heat-conducting silicone sheet meets the needs of gap filling under certain compression, keeps the thermal conductivity unchanged, and can quickly conduct heat to the shell to achieve a good heat dissipation purpose.
